| No | Part number | Description ( Function ) | Manufacturers | |
| 3 | 3DG2222 | SILICON NPN TRANSISTOR 2N2222(3DG2222) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于一般放大。 Purpose: General purpose amplifier. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit VCBO 60 V VCEO 30 V VEBO 5.0 V IC 600 mA PC 625 mW Tj 150 ℃ Tstg -55～150 ℃ 电性能参数/Electrical characteristics(Ta=25℃) |
 LZG |
|
| 2 | 3DG2222A | NPN silicon high-frequency low-power transistors 3DG2222A(BT2222A)型 NPN 硅高频小功率晶体管 参数符号 测试条件 PCM 极 限 ICM 值 Tjm Tstg V(BR)CBO V(BR)CEO V(BR)EBO 直 ICBO 流 IEBO 参 数 VCEsat TC≤75℃ ICB＝0.1mA ICE＝0.1mA IEB＝0.1mA VCB=10V VCB=4V IC=0.5A IB=0.05A hFE 交 流 参 fT 数 VCE=10V IC=0.15A IC=50mA VCE=10V f=20MHZ 规范值 300 600 150 -55~150 ≥75 ≥40 ≥6.0 ≤1.0 ≤1.0 |
 ETC |
|
| 1 | 3DG2222A | SILICON NPN TRANSISTOR 2N2222A(3DG2222A) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于一般放大。 Purpose: General purpose amplifier. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit VCBO 75 V VCEO 40 V VEBO 6.0 V IC 600 mA PC 625 mW Tj 150 ℃ Tstg -55～150 ℃ 电性能参数/Electrical characteristics(Ta=25℃) |
LZG |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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