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Datasheet 3N80 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 3N80 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
3N80
·FEATURES ·Drain Current ID=3.0A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 800V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 4.5Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching power supplies,convert |  Inchange Semiconductor | mosfet |
| 2 | 3N80 | N-Channel Power MOSFET, Transistor SEMICONDUCTOR
3N80 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
DESCRIPTION
(3A, 800Volts)
The Nell 3N80 is a three-terminal silicon device with current conduction capability of 3A, fast switching speed, low on-state resistance, breakdown voltage rating of 800V ,and max. thr |  nELL | mosfet |
| 3 | 3N80 | 800 Volts N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 3N80
Preliminary Power MOSFET
2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 3N80 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for u |  Unisonic Technologies | mosfet |
| 4 | 3N80A | SSS3N80A |  Samsung semiconductor | data |
| 5 | 3N80C | FQP3N80C FQP3N80C / FQPF3N80C — N-Channel QFET® MOSFET
FQP3N80C / FQPF3N80C
N-Channel QFET® MOSFET
800 V, 3.0 A, 4.8
Features
• 3.0 A, 800 V, RDS(on) = 4.8 Ω (Max.) @ VGS = 10 V, ID = 1.5 A
• Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 5.5 pF) • 100% Avalanche Tested
June 2014
Descripti |  Fairchild Semiconductor | data |
3N8 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 3N80 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
3N80
·FEATURES ·Drain Current ID=3.0A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 800V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 4.5Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching power supplies,convert Inchange Semiconductor mosfet | | |
| 2 | 3N80 | N-Channel Power MOSFET, Transistor SEMICONDUCTOR
3N80 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
DESCRIPTION
(3A, 800Volts)
The Nell 3N80 is a three-terminal silicon device with current conduction capability of 3A, fast switching speed, low on-state resistance, breakdown voltage rating of 800V ,and max. thr nELL mosfet | | |
| 3 | 3N80 | 800 Volts N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 3N80
Preliminary Power MOSFET
2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 3N80 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for u Unisonic Technologies mosfet | | |
| 4 | 3N80A | SSS3N80A Samsung semiconductor data | | |
| 5 | 3N80C | FQP3N80C FQP3N80C / FQPF3N80C — N-Channel QFET® MOSFET
FQP3N80C / FQPF3N80C
N-Channel QFET® MOSFET
800 V, 3.0 A, 4.8
Features
• 3.0 A, 800 V, RDS(on) = 4.8 Ω (Max.) @ VGS = 10 V, ID = 1.5 A
• Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 5.5 pF) • 100% Avalanche Tested
June 2014
Descripti Fairchild Semiconductor data | | |
| 6 | 3N81 | (3N8x) Silicon Controlled Switches Micro Electronics data | | |
| 7 | 3N82 | (3N8x) Silicon Controlled Switches Micro Electronics data | |
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