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Datasheet 3N90 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 3N90 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
3N90
·FEATURES ·Drain Current ID= 3A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 4.8Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching power supplies,converte |
 Inchange Semiconductor |
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| 3 | 3N90 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
3N90
3A, 900V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 3N90 provides excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) < 4.8 Ω @ VGS = 10 V * |
 Unisonic Technologies |
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| 2 | 3N90-E | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 3N90-E
3A, 900V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 3N90-E provides excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) < 6.2Ω @ VGS=10V, I |
Unisonic Technologies |
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| 1 | 3N90A | Advanced Power MOSFET w
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 Samsung Electronics |
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