Datasheet 3N90-E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	3N90-E	N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 3N90-E 3A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N90-E provides excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) < 6.2Ω @ VGS=10V, I	Unisonic Technologies

3N9 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
3N90A	Advanced Power MOSFET w w w .D at aS he et 4U .c om	Samsung Electronics
3N90	N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 3N90 ·FEATURES ·Drain Current ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.8Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching pow	Inchange Semiconductor
3N90	N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 3N90 3A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N90 provides excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) < 4.8	Unisonic Technologies

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Número de pieza	Descripción	Fabricantes	PDF
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