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Datasheet 40N10 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | 40N10 | N-CHANNEL MOSFET 40N10(F,B,H)
40A mps,100 Volts N-CHANNEL MOSFET
FEATURE
40A,100V,RDS(ON)=40mΩ@VGS=10V/20A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 40N10
ITO-220AB 40N10F
TO-263 40N10B
TO-262 40N10H
Absolute Maximum Ratings(TC=2 |
 CHONGQING PINGYANG |
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| 5 | 40N10 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
40N10
·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.04Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching power supplies,conve |
 Inchange Semiconductor |
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| 4 | 40N10 | DTU40N10 www.din-tek.jp
DT81
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS (V) 100 rDS(on) (Ω) 0.030 at VGS = 10 V 0.034 at VGS = 6 V ID (A) 40 37.5
FEATURES
• TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package
Available
RoHS*
COMPLIANT
D
TO-25 |
 DinTek |
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| 3 | 40N10B | N-CHANNEL MOSFET 40N10(F,B,H)
40A mps,100 Volts N-CHANNEL MOSFET
FEATURE
40A,100V,RDS(ON)=40mΩ@VGS=10V/20A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 40N10
ITO-220AB 40N10F
TO-263 40N10B
TO-262 40N10H
Absolute Maximum Ratings(TC=2 |
CHONGQING PINGYANG |
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