| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | 4N60-S | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 4N60-S 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-S is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power |
 Unisonic Technologies |
|
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| 4N60 | N-CHANNEL MOSFET KIA SEMICONDUCTORS 600V N-CHANNEL MOSFET 4N60 1.Description The KIA4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power M |
 KIA |
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| 4N60 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 4N60 4 Amps, 600 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche ch |
Unisonic Technologies |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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