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Datasheet 4N60B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 4N60B | N-Chanel Power MOSFET N-Chanel Power MOSFET
ANA4N60B, ANP4N60B, ANB4N60B, AND4N60B, ANI4N60B, ANU4N60B Rdson=2,2 , Vds=600 V, Qg(tot)=12 nC Applications
SMPS PFC
Features
Low Qg Low Rdson RoHS compliant
1 Gate 2 Drain 3 Source
Table 1. Device summary
Part numbers ANA4N60B ANP4N60B ANB4N60B AND4N6 |
 angstrem |
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| 2 | 4N60B | 600V N-Channel MOSFET SSP4N60B/SSS4N60B
SSP4N60B/SSS4N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, |
 Fairchild Semiconductor |
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| 1 | 4N60B | N-channel I-PAK/D-PAK/TO-220F MOSFET SAMWIN
TO-251 TO-252 TO-220F
SW4N60B
N-channel I-PAK/D-PAK/TO-220F MOSFET
BVDSS : 600V ID
1
Features
■ High ruggedness ■ RDS(ON) (Max 2.5 Ω)@VGS=10V ■ Gate Charge (Typ 11nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
: 4A
RDS(ON) : 2.5Ω
2 1 3 2 3 1 2 2 3 1 3
1. Gate 2. Dr |
 SEMIPOWER |
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