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Datasheet 50N06 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 50N06 | N-CHANNEL MOSFET 50N06(F,B,H)
50A mps,60 Volts N-CHANNEL MOSFET
FEATURE
50A,60V,RDS(ON)=16mΩ@VGS=10V/25A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 50N06
ITO-220AB 50N06F
TO-263 50N06B
TO-262 50N06H
Absolute Maximum Ratings(TC=25� | CHONGQING PINGYANG | mosfet |
2 | 50N06 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
50N06
·DESCRIPTION ·Drain Current ID= 50A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Fast Switching Speed
·APPLICATIONS ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAM | Inchange Semiconductor | mosfet |
3 | 50N06 | Power-Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd
50N06
Power-Transistor
Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant
Product Summary V DS | Tuofeng Semiconductor | transistor |
4 | 50N06 | Low voltage high current power MOS FET 50N06
* '6
72
Available
RoHS*
COMPLIANT
'
* 6
VDS ID VGS PD TJ Tstg EAS
52.4
Ciss Coss Crss
VDS=2v, V GS=0V,f=1.0MHZ VDS=2v,V GS=0V,f=1.0MHZ VDS=2v,V GS=0V,f=1.0MHZ
特性参数值(TC=25ºC)
参数说明 漏源反向电压 漏源截止电流 栅源截止电流
通态电阻
栅源极 | ETC | data |
5 | 50N06 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 50N06
50 Amps, 60 Volts N-CHANNEL POWER MOSFET
1
MOSFET
DESCRIPTION
The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold volta | Unisonic Technologies | mosfet |
50N Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 50N02-09 | SUB50N02-09 SUD50N02-09P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.0095 @ VGS = 10 V 0.017 @ VGS = 4.5 V
ID (A)a
20 15
D D D D
TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency 100% Rg Tested
APPLICATIONS
D High- Vishay Siliconix data | | |
2 | 50N024 | SUD50N024
SUD50N024-06P
New Product
Vishay Siliconix
N-Channel 22-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
24C
FEATURES
ID (A)d
80 64
rDS(on) (W)
0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency
AP Vishay Siliconix data | | |
3 | 50N02409PU54A | SU50N02409PU54A
SUD50N024-06P
New Product
Vishay Siliconix
N-Channel 22-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
24C
FEATURES
ID (A)d
80 64
rDS(on) (W)
0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for Vishay Intertechnology data | | |
4 | 50N025-05P | SUD50N025-05P New Product
SUD50N025-05P
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
25 0.0052 @ VGS = 10 V 0.0076 @ VGS = 4.5 V
ID (A)a, e
89 80
Qg (Typ)
30 nC
TO-252
FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant
APPLICATIONS D DC/DC Conversion Vishay Siliconix data | | |
5 | 50N03 | Power Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd
50N03
Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) � Tuofeng transistor | | |
6 | 50N03 | N-CHANNEL MOSFET KIA
SEMICONDUCTORS
50 Amps, 30 Volts N-CHANNEL MOSFET
1.Features
Advanced trench process technology High density cell design for ultra low on-resistance Fully characterized avalanche voltage and current
2.Applications
VDSS=30V,RDS(on)=6.5mΩ,ID=50A Vds=30V RDS(ON)=6.5mΩ(M KIA mosfet | | |
7 | 50N035 | N-Channel Field Effect Transistor
Bay Linear
Linear Excellence
N-Channel Field Effect Transistor
50N035
Description
The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automoti Bay Linear transistor | |
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Número de pieza | Descripción | Fabricantes | |
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