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Datasheet 53NA50 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 53NA50 | STE53NA50 STE53NA50
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE ST E53NA50
s s s s
V DSS 500 V
R DS(on) < 0.085 Ω
ID 53 A
s s
s s
s
TYPICAL RDS(on) = 0.075 Ω HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY T |  ST Microelectronics | data |
53N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 53N05 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
53N05
·DESCRIPTION ·Drain Current ID= 53A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 50V(Min) ·Fast Switching Speed
·APPLICATIONS ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAM  Inchange Semiconductor mosfet | | |
| 2 | 53N06 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
53N06
·DESCRIPTION ·Drain Current ID= 53A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Fast Switching Speed
·APPLICATIONS ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAM Inchange Semiconductor mosfet | | |
| 3 | 53NA50 | STE53NA50 STE53NA50
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE ST E53NA50
s s s s
V DSS 500 V
R DS(on) < 0.085 Ω
ID 53 A
s s
s s
s
TYPICAL RDS(on) = 0.075 Ω HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY T ST Microelectronics data | | |
| 4 | 53NC50 | STE53NC50
N-CHANNEL 500V - 0.070Ω - 53A ISOTOP PowerMesh™II MOSFET
TYPE STE53NC50
n n n n n
STE53NC50
VDSS 500V
RDS(on) < 0.08Ω
ID 53 A
TYPICAL RDS(on) = 0.07 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTION  STMicroelectronics data | |
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