5N60 PDF Datasheet

SEMICONDUCTOR 5N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (5A, 600Volts) DESCRIPTION The Nell 5N60 is a three-terminal silicon device with current conduction capability of 5A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switche

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 5N60 ·DESCRIPTION ·Drain Current ID= 5.6A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fast Switching Speed ·APPLICATIONS ·AC Adapter, Battery Charge and SMPS ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source

UNISONIC TECHNOLOGIES CO., LTD 5N60 4.5 Amps, 600 Volts N-CHANNEL MOSFET 1 Power MOSFET DESCRIPTION The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed swi

FQB5N60C / FQI5N60C QFET FQB5N60C / FQI5N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, an

UNISONIC TECHNOLOGIES CO., LTD 5N60K-MT 5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in po

UNISONIC TECHNOLOGIES CO., LTD 5N60Z Preliminary Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET „ DE SCRIPTION The U TC 5N60Z is a high voltag e po wer MOSF ET and is designed to h ave b etter cha racteristics, such as fast s witching time, lo w gate charg e, lo w on-state resista nce a nd have a hi gh rugged avalanche characteristics. This power MOSFET is usually used at hig