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Datasheet 60NM60 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 60NM60    STY60NM60

STY60NM60 N-CHANNEL 600V - 0.050Ω - 60A Max247 Zener-Protected MDmesh™Power MOSFET TYPE STY60NM60 VDSS 600V RDS(on) < 0.055Ω ID 60 A TYPICAL RDS(on) = 0.050Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INP
STMicroelectronics
STMicroelectronics
datasheet 60NM60 pdf

60N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
60N03S

AP60N03S

AP60N03S Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Fast Switching N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID GD S 30V 13.5mΩ 55A ▼ Simple Drive Requirement TO-263 Description The Advanced Power MOSFETs from APEC provide
Advanced Power Electronics
Advanced Power Electronics
datasheet pdf - Advanced Power Electronics
60NF06

N-Channel MOSFET Transistor

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 60NF06 FEATURES ·Drain Current –ID=60A@ TC=25℃ ·Drain Source Voltage: VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.016Ω(Max) ·Fast Switching DESCRI
Inchange
Inchange
datasheet pdf - Inchange
60N3LH5

N-channel Power MOSFET

STD60N3LH5 STP60N3LH5, STU60N3LH5 N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET™ V Power MOSFET Features Type STD60N3LH5 STP60N3LH5 STU60N3LH5 VDSS 30 V 30 V 30 V RDS(on) max 0.008 Ω 0.0084 Ω 0.0084 Ω ID 48 A 48 A 48 A ■ RDS(on) * Qg industry benchm
STMicroelectronics
STMicroelectronics
datasheet pdf - STMicroelectronics


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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