Datasheet 74VHCU04 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	74VHCU04	HEX INVERTER SINGLE STAGE ® 74VHCU04 HEX INVERTER (SINGLE STAGE) PRELIMINARY DATA s s s s s s s s s s HIGH SPEED: tPD = 3.5 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 10% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: \|I	STMicroelectronics	inverter
2	74VHCU04	Hex Inverter 74VHCU04 Hex Inverter July 1993 Revised April 1999 74VHCU04 Hex Inverter General Description The VHCU04 is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS l	Fairchild Semiconductor	inverter

74V Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	74V1G00	SINGLE 2-INPUT NAND GATE ® 74V1G00 SINGLE 2-INPUT NAND GATE s s s s s s s s HIGH SPEED: tPD = 3.7 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: \|IOH\| = IOL = 8 mA (MIN) BAL	STMicroelectronics	gate
2	74V1G00C	SINGLE 2-INPUT NAND GATE ® 74V1G00 SINGLE 2-INPUT NAND GATE s s s s s s s s HIGH SPEED: tPD = 3.7 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: \|IOH\| = IOL = 8 mA (MIN) BAL	STMicroelectronics	gate
3	74V1G00S	SINGLE 2-INPUT NAND GATE ® 74V1G00 SINGLE 2-INPUT NAND GATE s s s s s s s s HIGH SPEED: tPD = 3.7 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: \|IOH\| = IOL = 8 mA (MIN) BAL	STMicroelectronics	gate
4	74V1G02	SINGLE 2-INPUT NOR GATE ® 74V1G02 SINGLE 2-INPUT NOR GATE s s s s s s s s HIGH SPEED: tPD = 3.6 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: \|IOH\| = IOL = 8 mA (MIN) BALA	STMicroelectronics	gate
5	74V1G02C	SINGLE 2-INPUT NOR GATE ® 74V1G02 SINGLE 2-INPUT NOR GATE s s s s s s s s HIGH SPEED: tPD = 3.6 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: \|IOH\| = IOL = 8 mA (MIN) BALA	STMicroelectronics	gate
6	74V1G02S	SINGLE 2-INPUT NOR GATE ® 74V1G02 SINGLE 2-INPUT NOR GATE s s s s s s s s HIGH SPEED: tPD = 3.6 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: \|IOH\| = IOL = 8 mA (MIN) BALA	STMicroelectronics	gate
7	74V1G03	SINGLE 2-INPUT OPEN DRAIN NAND GATE ® 74V1G03 SINGLE 2-INPUT OPEN DRAIN NAND GATE PRELIMINARY DATA s s s s s s HIGH SPEED: tPD = 3.7 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS OPERATING VOLTAGE RANGE: VCC (OPR) =	STMicroelectronics	gate

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Número de pieza	Descripción	Fabricantes	PDF
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