INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1516 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3907 APPLICATIONS ·Power

Ordering number:EN2160A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1519/2SC3913 Switching Applications (with Bias Resistance) Applications · Switching circuits, inverter circuits, interface circuits, driver circuits. Features · On-chip bias resistance : R1=4.7kΩ, R2=4.

Ordering number:EN2159A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1518/2SC3912 Switching Applications (With Bias Resistance) Application · Switching circuits, inverters circuits, inferface circuits, driver circuits. Features · On-chip bias resistance : R1=10kΩ, R2=10

Transistors Medium Power Transistor (*32V, *1A) 2SB1132 / 2SA1515S / 2SB1237 FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = –500mA / –50mA) 2) Compliments 2SD1664 / 2SD1858. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units: m

Elektronische Bauelemente 2SA1515 -1 A, -40 V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Low Collector-Emitter Saturation Voltage  Low Transition Frequency CLASSIFICATION OF hFE Product-Rank 2S