Datasheet ACE7409B Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	ACE7409B	P-Channel 30-V (D-S) MOSFET ACE7409B P-Channel 30-V (D-S) MOSFET Description The ACE7409B uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a high side switch in SMPS and general purpose applications. Features  VDS (V) = -30 V  ID =-30A (at VGS=-10V)  <	ACE Technology

ACE74 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
ACE7407A	P-Channel Enhancement Mode MOSFET ACE7407A P-Channel Enhancement Mode MOSFET Description The ACE7407A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistanc	ACE Technology
ACE7409B	P-Channel 30-V (D-S) MOSFET ACE7409B P-Channel 30-V (D-S) MOSFET Description The ACE7409B uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a high side switch in SMPS and general purpose applications. Features  VDS (V) = -30 V  ID =-30A	ACE Technology
ACE7402M	N-Channel 30-V MOSFET ACE7402M N-Channel 30-V MOSFET Description The ACE7402M uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a high side switch in SMPS and general purpose applications. Features • Low rDS(on) trench technology • L	ACE Technology

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Número de pieza	Descripción	Fabricantes	PDF
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