Datasheet AGR19125E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	AGR19125E	Transistor AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), time-division	TriQuint Semiconductor

AGR191 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
AGR19180EF	Transistor AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 1	TriQuint Semiconductor
AGR19125E	Transistor AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990	TriQuint Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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