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Datasheet AT49BV008AT Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 13 | AT49BV008AT | 8-Megabit 1M x 8/ 512K x 16 CMOS Flash Memory Features
• • • •
2.7V to 3.6V Read/Write Operation Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture – One 8K Words (16K bytes) Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks – One 496K Words (992K bytes) Main Memory Array |
 ATMEL Corporation |
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| 12 | AT49BV008AT-12CC | 8-Megabit 1M x 8/ 512K x 16 CMOS Flash Memory Features
• • • •
2.7V to 3.6V Read/Write Operation Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture – One 8K Words (16K bytes) Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks – One 496K Words (992K bytes) Main Memory Array |
ATMEL Corporation |
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| 11 | AT49BV008AT-12CI | 8-Megabit 1M x 8/ 512K x 16 CMOS Flash Memory Features
• • • •
2.7V to 3.6V Read/Write Operation Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture – One 8K Words (16K bytes) Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks – One 496K Words (992K bytes) Main Memory Array |
ATMEL Corporation |
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| 10 | AT49BV008AT-12TC | 8-Megabit 1M x 8/ 512K x 16 CMOS Flash Memory Features
• • • •
2.7V to 3.6V Read/Write Operation Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture – One 8K Words (16K bytes) Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks – One 496K Words (992K bytes) Main Memory Array |
ATMEL Corporation |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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