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Datasheet BAR80 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | BAR80 | Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss) BAR 80
l l l
Silicon RF Switching Diode
Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss
Type BAR 80
Marking AAs
Ordering code (tape and reel) Q62702-A1084
Pin configuration 1 2 3 C A C
Package 4 A MW-4
1)
Maximum ratings Parameter Reverse voltage |
 Siemens Semiconductor Group |
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| 1 | BAR80 | Silicon RF Switching Diode BAR80
Silicon RF Switching Diode
Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss
3 4 2 1
VSO05553
Type BAR80
Maximum Ratings Parameter Diode reverse voltage Forward current Junction temperature
Marking AAs 1=C
Pin Configuration 2=A 3=C 4=A
Packag |
 Infineon Technologies AG |
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