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Datasheet BAR81 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | BAR81 | Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) BAR 81 Silicon RF Switching Diode
Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss
Type BAR 81
Marking Ordering Code BBs Q62702Q62702-A1145
Pin Configuration 1=C 2=A 3=C 4=A
Package MW-4
Maximum Ratings Parameter Diode rever |
 Siemens Semiconductor Group |
 |
| 3 | BAR81 | Silicon RF Switching Diodes BAR81
Silicon RF Switching Diodes
Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss
3 4 2 1
VSO05553
Type BAR81
Maximum Ratings Parameter Diode reverse voltage Forward current Junction temperature
Marking BBs 1=C
Pin Configuration 2=A 3=C 4=A
Packa |
 Infineon Technologies AG |
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| 2 | BAR81W | Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) BAR 81W
Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss
3 4
2 1
VPS05605
Type BAR 81W
Marking Ordering Code BBs Q62702-A1270
Pin Configuration
Package
1 = A1 2 = C2 3 = A2 4 = C1 SOT-343
Maximu |
Siemens Semiconductor Group |
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| 1 | BAR81W | Silicon RF Switching Diode BAR81...
Silicon RF Switching Diode
Designed for use in shunt configuration in
high performance RF switches
High shunt signal isolation Low shunt insertion loss Optimized for short - open transformation
using lines
BAR81W
4 3
1
2
Type BAR81W
Package SOT343
Configuration single sh |
Infineon Technologies AG |
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