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Datasheet BAS31 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BAS31 | DUAL SURFACE MOUNT SWITCHING DIODE |  TRSYS | diode |
| 2 | BAS31 | High Voltage General Purpose Diode BAS31
Discrete POWER & Signal Technologies
BAS31
CONNECTION DIAGRAM
3
3
3
L21
2
1 2
1 2
SOT-23
1
High Voltage General Purpose Diode
Sourced from Process 1H. See BAV19 / 20 / 21 for characteristics.
Absolute Maximum Ratings*
Symbol
W IV IO IF if if(surge) Working Inverse Voltage Average Rect |  Fairchild Semiconductor | diode |
| 3 | BAS31 | General purpose controlled avalanche double diodes DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAS29; BAS31; BAS35 General purpose controlled avalanche (double) diodes
Product specification Supersedes data of 1996 Sep 10 1999 May 21
Philips Semiconductors
Product specification
General purpose controlled avalanche (double) diodes |  NXP Semiconductors | diode |
| 4 | BAS31 | SURFACE MOUNT SWITCHING DIODES |  Jinan Gude Electronic Device | diode |
| 5 | BAS316 | HIGH SPEED DIODE Certificate TH97/10561QM
Certificate TW00/17276EM
BAS316
PRV : 100 Volts Io : 250 mA
HIGH SPEED DIODE
SOD-323
1.80 1.60
0.40 0.25
1.35 1.15
FEATURES :
* Very small plastic SMD package * High switching speed: max. 4 ns * Continuous reverse voltage: max. 100V * Repetitive peak reverse voltage: m |  EIC | diode |
BAS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BAS100ATB6 | SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES BAS100ATB6
SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES
VOLTAGE 100 Volts
FEATURES
• Smallest 100V Dual, isolated Schottky diode currently available • Lead free in comply with EU RoHS 2011/65/EU directives • Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICA  Pan Jit International diode | | |
| 2 | BAS101 | High Voltage Switching Diodes w w w . D a t a S h e e t 4 U . c o m
BAS101; BAS101S
High-voltage switching diodes
Rev. 01 — 8 September 2006 Product data sheet
1. Product profile
1.1 General description
High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package.
Table 1. Produc NXP Semiconductors diode | | |
| 3 | BAS101S | High Voltage Switching Diodes w w w . D a t a S h e e t 4 U . c o m
BAS101; BAS101S
High-voltage switching diodes
Rev. 01 — 8 September 2006 Product data sheet
1. Product profile
1.1 General description
High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package.
Table 1. Produc NXP Semiconductors diode | | |
| 4 | BAS11 | Controlled avalanche rectifiers DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D122
BAS11; BAS12 Controlled avalanche rectifiers
Product specification Supersedes data of April 1996 1996 Sep 26
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
FEATURES • Glass passivated • High maximum o NXP Semiconductors rectifier | | |
| 5 | BAS116 | SWITCHING DIODE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAS116 SWITCHING DIODE
FEATURES z Low leakage current applications z Medium speed switching times
MARKING: JV
SOT-23
1 3
2
Maximum Ratings @Ta=25℃
Parameter Peak Repetitive Peak Reverse Voltage Working Peak Re  JCET diode | | |
| 6 | BAS116 | LOW LEAKAGE SWITCHING DIODE BAS116
LOW LEAKAGE SWITCHING DIODE
Features • Plastic SMD package • Low leakage current • High switching speed
Application • Low leakage current applications in
surface mounted circuits.
3
12
Marking Code: JV SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Repetiti  SEMTECH diode | | |
| 7 | BAS116 | LOW LEAKAGE SWITCHING DIODES BAS116/BAW156/BAV170/BAV199
SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES
VOLTAGE 100 Volts
POWER 250mWatts
FEATURES
• Suface mount package ideally suited for automatic insertion. • Very low leakage current. 2pA typical at VR=75V. • Low capacitance. 2pF max at VR=0V, f=1MHz • In compliance Pan Jit International diode | |
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