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Datasheet BC637 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | BC637 | SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS
BC635, 637, 639 NPN BC636, 638, 640 PNP
TO-92 Plastic Package
For Lead Free Parts, Device Part # will be Prefixed with "T"
ECB
High Current Transistor
ABSOLUTE MAXIMUM |
 CDIL |
 |
| 9 | BC637 | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT TRANSISTORS.
FEATURES ᴌComplementary to BC638.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature
VCBO VCEO VEBO
IC P |
 KEC |
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| 8 | BC637 | NPN Type Plastic Encapsulate Transistors Elektronische Bauelemente
BC635 / BC637 / BC639
NPN Type Plastic Encapsulated Transistor
FEATURE High current transistor
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
TO-92
4.55±0.2
3.5±0.2
4.5±0.2
14.3±0.2
0.4 6+–00..11
0.43+–00..0078
(1.27 Typ). 123
1.25 |
 SeCoS |
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| 7 | BC637 | NPN Silicon Epitaxial Planar Transistor ST BC635 / BC637 / BC639
NPN Silicon Epitaxial Planar Transistor
Medium Power Transistors for driver stages of audio / video amplifiers
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage Collector Current Peak Collector Current Base |
 SEMTECH |
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| Número de pieza | Descripción | Fabricantes | |
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