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Datasheet BCP55 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 15 | BCP55 | NPN MEDIUM POWER TRANSISTORS Features
BVCEO > 45V, 60V & 80V IC = 1A High Continuous Collector Current ICM = 2A Peak Pulse Current 2W Power Dissipation Low Saturation Voltage VCE(sat) < 500mV @ 0.5A Gain Groups 10 and 16 Complementary PNP Types: BCP51, 52 and 53 Totally Lead-Free & Fully RoHS Com |
 Diodes |
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| 14 | BCP55 | MEDIUM POWER AMPLIFIER BCP55/56
MEDIUM POWER AMPLIFIER
ADVANCE DATA
s
s
s
s
SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE PNP COMPLEMENTS |
 STMicroelectronics |
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| 13 | BCP55 | NPN General Purpose Amplifier BCP55
BCP55
C
E C B
SOT-223
NPN General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A. Sourced from Process 38. See BCP54 for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC |
 Fairchild Semiconductor |
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| 12 | BCP55 | NPN medium power transistors BCP55; BCX55; BC55PA
60 V, 1 A NPN medium power transistors
Rev. 8 — 24 October 2011
Product data sheet
1. Product profile
1.1 General description
NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
Table 1. Product overview
Type number[1]
Package
NXP
BCP5 |
 NXP Semiconductors |
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