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Datasheet BF240 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BF240 | AM/FM Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
AM/FM Transistor
Order this document by BF240/D
NPN Silicon
COLLECTOR 1 3 BASE
BF240
1
2
2 EMITTER
3
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device D | Motorola Inc | transistor |
2 | BF240 | NPN medium frequency transistor DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BF240 NPN medium frequency transistor
Product specification Supersedes data of 1998 Dec 02 1999 Apr 21
Philips Semiconductors
Product specification
NPN medium frequency transistor
FEATURES • Low current (max. 25 mA) • Low voltage ( | NXP Semiconductors | transistor |
3 | BF240 | NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS
BF240 BF241 TO-92 Plastic Package
E
BC
A.M.Mixer, IF Amplifiers in AM/ FM Receiver Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless otherwise specified) DE | CDIL | transistor |
4 | BF240 | NPN RF Transistor BF240
BF240
NPN RF Transistor
1
TO-92
1. Collector 2. Emitter 3. Base
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage | Fairchild Semiconductor | transistor |
5 | BF240 | Trans GP BJT NPN 40V 0.05A 3-Pin TO-92 Bulk | New Jersey Semiconductor | data |
BF2 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BF20-601A | Diode, Rectifier American Microsemiconductor diode | | |
2 | BF200 | NPN TRANZYSTORY ETC data | | |
3 | BF2000 | Silicon N Channel MOSFET Tetrode BF 2000
Silicon N Channel MOSFET Tetrode Target data sheet • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz
3 4 2 1
VPS05178
Type BF 2000
Marking Ordering Code NDs Q62702-F1771
Pin Configuration 1=S 2=D 3 = G2 4 = G1
Package S Siemens Semiconductor Group mosfet | | |
4 | BF2000W | Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz) BF 2000W
Silicon N Channel MOSFET Tetrode Target data sheet • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz
3 4
2 1
VPS05605
Type
Marking Ordering Code Q62702-F1772
Pin Configuration 1=D 2=S 3 = G1 4 = G2
Package SOT-343
BF Siemens Semiconductor Group mosfet | | |
5 | BF200B | NPN High Frequency Transistors Bharat transistor | | |
6 | BF200B | IF / RF Amplifiers and Oscillators Advani amplifier | | |
7 | BF2030 | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V) BF 2030
Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V
3 4 2 1
VPS05178
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type BF 2030
Marking Ordering Code NEs Q62702-F1773
Pin Siemens Semiconductor Group mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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