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Datasheet BFR30 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | BFR30 | JFET BFR30,31
MAXIMUM RATINGS
Rating Drain-Source Voltage Gate-Source Voltage
Symbol VDS vgs
THERMAL CHARACTERISTICS
Characteristic
Symbol
"Total Device Dissipation, T^ = 25°C
Derate above 25°C
PD
Storage Temperature
Tstg
•Thermal Resistance Junction to Ambient
RflJA
•Package mounted on |
 Motorola Semiconductors |
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| 3 | BFR30 | N-channel field-effect transistors DISCRETE SEMICONDUCTORS
DATA SHEET
BFR30; BFR31 N-channel field-effect transistors
Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1997 Dec 05
Philips Semiconductors
Product specification
N-channel field-effect transistors
DESCRIPTION Planar epita |
 NXP Semiconductors |
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| 2 | BFR30LT1 | JFET Amplifiers(N-Channel) MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BFR30LT1/D
JFET Amplifiers
N–Channel
2 SOURCE 3 GATE
BFR30LT1 BFR31LT1
3 1
1 DRAIN
2
CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB)
MAXIMUM RATINGS
Rating Drain – Source Voltage Gate – Source Voltage Symbol VDS VGS Value |
 Motorola Inc |
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| 1 | BFR30LT1 | JFET Amplifiers BFR30LT1, BFR31LT1
JFET Amplifiers
N − Channel
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol
Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDrain−Source Voltage
VDS 25 Vdc
ÎÎÎÎ |
 ON Semiconductor |
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