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Datasheet BR93LC66 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | BR93LC66 | 4/096-Bit Serial Electrically Erasable PROM Memory ICs
4,096-Bit Serial Electrically Erasable PROM
BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV
Features • • Low power CMOS Technology • 256 × 16 bit configuration • 2.7V to 5.5V operation • Low power dissipation – 3mA (max.) active current: 5V – 5µA (max.) standby current: 5V |
 ROHM Semiconductor |
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| 3 | BR93LC66F | 4/096-Bit Serial Electrically Erasable PROM Memory ICs
4,096-Bit Serial Electrically Erasable PROM
BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV
Features • • Low power CMOS Technology • 256 × 16 bit configuration • 2.7V to 5.5V operation • Low power dissipation – 3mA (max.) active current: 5V – 5µA (max.) standby current: 5V |
ROHM Semiconductor |
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| 2 | BR93LC66FV | 4/096-Bit Serial Electrically Erasable PROM Memory ICs
4,096-Bit Serial Electrically Erasable PROM
BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV
Features • • Low power CMOS Technology • 256 × 16 bit configuration • 2.7V to 5.5V operation • Low power dissipation – 3mA (max.) active current: 5V – 5µA (max.) standby current: 5V |
ROHM Semiconductor |
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| 1 | BR93LC66RF | 4/096-Bit Serial Electrically Erasable PROM Memory ICs
4,096-Bit Serial Electrically Erasable PROM
BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV
Features • • Low power CMOS Technology • 256 × 16 bit configuration • 2.7V to 5.5V operation • Low power dissipation – 3mA (max.) active current: 5V – 5µA (max.) standby current: 5V |
ROHM Semiconductor |
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