Datasheet BSR17 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BSR17	NPN switching transistor DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR17A NPN switching transistor Product speciﬁcation Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 02 Philips Semiconductors Product speciﬁcation NPN switching transistor FEATURES • Low current	NXP Semiconductors	transistor
2	BSR17	NPN General Purpose Amplifier BSR17A BSR17A C E SOT-23 Mark: U92 B NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO	Fairchild Semiconductor	amplifier
3	BSR17A	NPN switching transistor DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR17A NPN switching transistor Product speciﬁcation Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 02 Philips Semiconductors Product speciﬁcation NPN switching transistor FEATURES • Low current	NXP Semiconductors	transistor
4	BSR17A	NPN General Purpose Amplifier BSR17A BSR17A C E SOT-23 Mark: U92 B NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO	Fairchild Semiconductor	amplifier
5	BSR17A	Surface mount Si-Epitaxial PlanarTransistors BSR 17A NPN Switching Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 1.1 NPN 250 mW SOT-23 (TO-236) 0.01 g 0.4 3 Plastic case Kunststoffgehäuse 1.3 ±0.1 Type Code 1 2 2.5	Diotec Semiconductor	transistor

BSR Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BSR12	PNP switching transistor DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR12 PNP switching transistor Product speciﬁcation 1999 Jul 23 Philips Semiconductors Product speciﬁcation PNP switching transistor FEATURES • Low current (max. 100 mA) • Low voltage (max. 15 V). APPLICATIONS • High-speed, sat	NXP Semiconductors	transistor
2	BSR13	NPN switching transistors DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D088 BSR13; BSR14 NPN switching transistors Product speciﬁcation Supersedes data of 1997 Apr 22 1999 Apr 15 Philips Semiconductors Product speciﬁcation NPN switching transistors FEATURES • High current (max. 800 mA) • Low voltage (max. 40 V	NXP Semiconductors	transistor
3	BSR13	Surface mount Si-Epitaxial PlanarTransistors BSR 13, BSR 14 NPN Switching Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 250 mW SOT-23 (TO-236) 0.01 g 1.1 Plastic case Kunststoffgehäuse 1.3 ±0.1 Type Code 1 2	Diotec Semiconductor	transistor
4	BSR13	NPN General Purpose Amplifier BSR13 BSR13 NPN General Purpose Amplifier • Sourced from process 10. C E B SOT-23 Mark: U7 Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous	Fairchild Semiconductor	amplifier
5	BSR14	NPN General Purpose Amplifier	Fairchild Semiconductor	amplifier
6	BSR14	NPN switching transistors DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D088 BSR13; BSR14 NPN switching transistors Product speciﬁcation Supersedes data of 1997 Apr 22 1999 Apr 15 Philips Semiconductors Product speciﬁcation NPN switching transistors FEATURES • High current (max. 800 mA) • Low voltage (max. 40 V	NXP Semiconductors	transistor
7	BSR14	Surface mount Si-Epitaxial PlanarTransistors BSR 13, BSR 14 NPN Switching Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 250 mW SOT-23 (TO-236) 0.01 g 1.1 Plastic case Kunststoffgehäuse 1.3 ±0.1 Type Code 1 2	Diotec Semiconductor	transistor

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