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Datasheet BUK75 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 76 | BUK75 | (BUK75 / BUK76) TrenchMOS standard level FET
BUK75/76/7E04-40A
TrenchMOS™ standard level FET
Rev. 02 — 7 November 2001 Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: |
 NXP Semiconductors |
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| 75 | BUK7504-40A | N-channel TrenchMOS standard level FET BUK7504-40A
N-channel TrenchMOS standard level FET
Rev. 03 — 15 June 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qua |
NXP Semiconductors |
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| 74 | BUK7504-40A | TrenchMOS standard level FET BUK75/76/7E04-40A
TrenchMOS™ standard level FET
Rev. 02 — 7 November 2001
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: |
NXP Semiconductors |
|
| 73 | BUK7505-30A | TrenchMOS transistor Standard level FET Philips Semiconductors
Product specification
TrenchMOS™ transistor Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology which features very low on-state resistance. It is intended for us |
NXP Semiconductors |
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