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Datasheet BUK7880-55 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | BUK7880-55 | TrenchMOS transistor Standard level FET Philips Semiconductors
Product specification
TrenchMOS™ transistor Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technolgy the device features very low on-state r |
 NXP Semiconductors |
 |
| 2 | BUK7880-55 | TrenchMOS transistor Standard level FET Philips Semiconductors
Product specification
TrenchMOS™ transistor Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technolgy the device features very low on-state r |
NXP Semiconductors |
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| 1 | BUK7880-55A | N-channel TrenchMOS standard level FET BUK7880-55A
N-channel TrenchMOS standard level FET
Rev. 01 — 1 November 2007
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS |
NXP Semiconductors |
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