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Datasheet BUV10 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | BUV10 | Silicon NPN Power Transistor www.DataSheet.co.kr
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUV10
DESCRIPTION ·High Switching Speed ·High Current Capability
APPLICATIONS ·Designed for high current,high speed,high power applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO |
 Inchange Semiconductor |
 |
| 1 | BUV10N | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package BUV10N
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
1.47 (0.058) 1.60 (0.063)
29.9 (1.177) 30.4 (1.197)
16.64 (0.655) 17 |
 Seme LAB |
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