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Datasheet BUV20 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | BUV20 | NPN Silicon Low Frequency High Power Switching Transistor BUV20,BUV21,BUV22,BUV23,BUV24
NPN Silicon Low Frequency High Power Switching Transistor
Features: 1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability. 2. Good Switching Characteristic. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for |
 ETC |
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| 6 | BUV20 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV20
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 0.6V(Max.) @IC= 25A ·High DC Current Gain-
: hFE= 20(Min.)@ IC= 25A ·High Switching Speed
APPLICATIONS ·Designed for high speed, high current, hig |
 Inchange Semiconductor |
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| 5 | BUV20 | 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BUV20/D
SWITCHMODE Series NPN Silicon Power Transistor
. . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A hFE min = 10 at IC = 50 A • Low VCE(sat): VCE(sat) max. = |
 Motorola Inc |
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| 4 | BUV20 | NPN Silicon Power Transistor BUV20
SWITCHMODEt Series
NPN Silicon Power
Transistor
SWITCHMODE series NPN silicon power transistors are designed for high speed, high current, high power applications.
• High DC current gain:
hFE min = 20 at IC = 25 A
= 10 at IC = 50 A
• Low VCE(sat):
VCE(sat) max. = 0.6 V at IC = 25 |
 ON Semiconductor |
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| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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