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Datasheet BUV21 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | BUV21 | NPN Silicon Low Frequency High Power Switching Transistor BUV20,BUV21,BUV22,BUV23,BUV24
NPN Silicon Low Frequency High Power Switching Transistor
Features: 1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability. 2. Good Switching Characteristic. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for |
 ETC |
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| 4 | BUV21 | Bipolar NPN Device BUV21
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN Device in a Hermetically sealed TO3
Metal Package.
38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1.47 (0.058) 1.60 ( |
 Semelab |
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| 3 | BUV21 | 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BUV21/D
BUV21 SWITCHMODE Series NPN Silicon Power Transistor
. . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A • Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 8 A |
 Motorola Inc |
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| 2 | BUV21 | NPN Silicon Power Transistor BUV21
SWITCHMODEt Series NPN Silicon Power Transistor
This device is designed for high speed, high current, high power applications.
Features
• High DC Current Gain:
hFE min = 20 at IC = 12 A
• Low VCE(sat), VCE(sat)
max = 0.6 V at IC = 8 A
• Very Fast Switching Times:
TF max = 0.4 ms at IC = |
 ON Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
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