BUZ20 PDF Datasheet

BUZ 20 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 20 VDS 100 V ID 13.5 A RDS(on) 0.2 Ω Package TO-220 AB Ordering Code C67078-S1302-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 13.5 Unit A ID IDpuls 54 TC = 28 °C Pulsed drain current TC = 25 °C Avalanche current,lim

BUZ20 Semiconductor Data Sheet October 1998 File Number 2254.1 12A, 100V, 0.200 Ohm, N-Channel Power MOSFET Features • 12A, 100V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.200Ω (BUZ20 field effect transistor designed for applications such as • SOA is Power Dissipation Limited ) switching regulators, switching converters, motor

SIPMOS ® Power Transistor BUZ 20 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 20 100 V 13.5 A 0.2 Ω TO-220 AB C67078-S1302-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID 13.5 A TC = 28 ˚C Pulsed drain current IDpuls 54 TC = 25 ˚C Avalanche

SIPMOS® Power Transistor q N channel q Enhancement mode q FREDFET BUZ 205 Type BUZ 205 VDS 400 V ID 6.0 A RDS (on) 1.0 Ω Package 1) TO-220 AB Ordering Code C67078-A1401-A2 Maximum Ratings Parameter Continuous drain current, TC = 35 ˚C Pulsed drain current, TC = 25 ˚C Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Power dissipation, TC =