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Datasheet BUZ73A Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BUZ73ASIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ 73 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 73 A VDS 200 V ID 5.5 A RDS(on) 0.6 Ω Package TO-220 AB Ordering Code C67078-S1317-A3 Maximum Ratings Parameter Continuous drain current Symbol Values 5.5 Unit A
Siemens Semiconductor Group
Siemens Semiconductor Group
transistor
2BUZ73A5.8A/ 200V/ 0.600 Ohm/ N-Channel Power MOSFET

BUZ73A Semiconductor Data Sheet October 1998 File Number 2263.1 5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET Features • 5.8A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.600Ω (BUZ73 field effect transistor designed for applications such as • S
Intersil Corporation
Intersil Corporation
mosfet
3BUZ73ASIPMOS Power Transistor

SIPMOS ® Power Transistor BUZ 73A • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 200 V ID 5.5 A RDS(on) 0.6 Ω Package Ordering Code BUZ 73 A TO-220 AB C67078-S1317-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current
Infineon Technologies AG
Infineon Technologies AG
transistor
4BUZ73AN-Channel Enhancement Mode Power MOS Transistors

SEMICONDUCTORS BUZ73A N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE This is an N-channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipo
Comset Semiconductors
Comset Semiconductors
transistor
5BUZ73ALSIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

BUZ 73 AL SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 G Type BUZ 73 AL Pin 2 D Pin 3 S VDS 200 V ID 5.5 A RDS(on) 0.6 Ω Package TO-220 AB Ordering Code C67078-S1328-A3 Maximum Ratings Parameter Continuous drain current Symbol Va
Siemens Semiconductor Group
Siemens Semiconductor Group
transistor


BUZ Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BUZ10N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET

® BUZ10 N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET™ MOSFET T YPE BUZ 10 s s s s s V DSS 50 V R DS(o n) < 0.07 Ω ID 23 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE 3 1 2 APPLICATIONS HIGH CURRENT, H
STMicroelectronics
STMicroelectronics
mosfet
2BUZ10SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ 10 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 10 VDS 50 V ID 23 A RDS(on) 0.07 Ω Package TO-220 AB Ordering Code C67078-S1300-A2 Maximum Ratings Parameter Continuous drain current Symbol Valu
Siemens Semiconductor Group
Siemens Semiconductor Group
transistor
3BUZ10Trans MOSFET N-CH 50V 23A 3-Pin(3+Tab) TO-220

New Jersey Semiconductor
New Jersey Semiconductor
mosfet
4BUZ100SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)

BUZ 100 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 G Type BUZ 100 Pin 2 D Pin 3 S VDS 50 V ID 60 A RDS(on) 0.018 Ω Package TO-220 AB Orde
Siemens Semiconductor Group
Siemens Semiconductor Group
transistor
5BUZ100LSIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

BUZ 100L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Pin 1 G Pin 2 D Pin 3 S Type BUZ 100L VDS 50 V ID 60 A RDS(on) 0.018 Ω Pac
Siemens Semiconductor Group
Siemens Semiconductor Group
transistor
6BUZ100SSIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)

BUZ 100 S SPP77N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 77 A RDS(on) 0.015 Ω Package Ordering Code BUZ 100 S TO-220 AB Q67
Siemens Semiconductor Group
Siemens Semiconductor Group
transistor
7BUZ100SLSIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated)

BUZ 100 SL SPP70N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 70 A RDS(on) 0.018 Ω Package Ordering Code BUZ 100
Siemens Semiconductor Group
Siemens Semiconductor Group
transistor



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