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Datasheet BUZ76 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | BUZ76 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 76
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 76
VDS
400 V
ID
3A
RDS(on)
1.8 Ω
Package TO-220 AB
Ordering Code C67078-S1315-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 3 Unit A
ID IDpul |
 Siemens Semiconductor Group |
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| 5 | BUZ76 | 3A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET BUZ76
Semiconductor
Data Sheet
October 1998
File Number 2264.1
3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
Features
• 3A, 400V
[ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 1.800Ω (BUZ76) field effect transistor designed for applications such as • SOA i |
 Intersil Corporation |
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| 4 | BUZ76 | SIPMOS Power Transistor BUZ 76
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS 400 V
ID 3A
RDS(on) 1.8 Ω
Package
Ordering Code
BUZ 76
TO-220 AB
C67078-S1315-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
TC = 3 |
 Infineon Technologies AG |
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| 3 | BUZ76A | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 76 A
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 76 A
VDS
400 V
ID
2.7 A
RDS(on)
2.5 Ω
Package TO-220 AB
Ordering Code C67078-S1315-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 2.7 Unit A
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Siemens Semiconductor Group |
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