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Datasheet BZX55-C4V7 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BZX55-C4V7 | AXIAL LEAD ZENER DIODES DATA SHEET
BZX55-C SERIES
AXIAL LEAD ZENER DIODES
VOLTAGE 2.4 to 47 Volts
POWER
500 mWatts DO-35
FEATURES
• Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb | Pan Jit International | diode |
2 | BZX55-C4V7 | 500mW Zener Diode Pb RoHS COMPLIANCE
Features
Fast switching speed General purpose rectification Silicon epitaxial planar construction
Mechanical Data
Case: DO-35 Leads:Solderableper MIL-STD-202,
Method 208 Polarity: Cathode band Marking: Type number Weight: 0.13 grams (approx.)
BZX55C SERIES | Taiwan Semiconductor | diode |
3 | BZX55-C4V7 | 0.5W SILICON PLANAR ZENER DIODES CE
CHENYI ELECTRONICS FEATURES
. The zener voltage are graded according to the international E24 standard .Other voltage tolerance and higher zener voltage on request.
BZX55-C0V8 THRU BZX55-C200
0.5W SILICON PLANAR ZENER DIODES
MECHANICAL DATA
. Case: DO-35 glass case . Polarity: Color band denote | CHENYI ELECTRONICS | diode |
4 | BZX55-C4V7 | Zener Diode, Rectifier BZX55-C0V8 THRU BZX55-C75
ZENER DIODES
FEATURES
DO-35
min. 1.083 (27.5)
♦ Silicon Planar Power Zener Diodes ♦ The Zener voltages are graded according to the international E 24 standard. Standard Zener voltage tolerance is ±5%. Replace suffix “C” with “B” for ±2% tolerance. Other volta | General Semiconductor | diode |
5 | BZX55-C4V7 | 500 mWatt Zener Diode 2.42 to 47 Volts MCC
Features
• •
omponents 21201 Itasca Street Chatsworth !"# $
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BZX55-C2V4 THRU BZX55-C47
500 mWatt Zener Diode 2.42 to 47 Volts
Silicon Planar Power Zener Diodes Glass Package
Maximum Ratings
Symbol PD RJA TJ TSTG Rating Po | Micro Commercial Components | diode |
BZX Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BZX10 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
2 | BZX10 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
3 | BZX11 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
4 | BZX11 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
5 | BZX12 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
6 | BZX12 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
7 | BZX13 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | |
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