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Datasheet C2901 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | C2901 | NPN Transistor, 2SC2901 |  NEC | data |
C29 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | C29-F100 | Service Manual ( )
 Hitachi data | | |
| 2 | C2901 | NPN Transistor, 2SC2901 NEC data | | |
| 3 | C2904 | NPN Transistor, 2SC2904 2SC2904
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC2904 is a silicon
epitaxial plana type transistor designed for high power amplifiers in HF band.
FEATURES:
• Internal Input Matching Network • PG = 11.5 dB at 1000 W/30 MHz • Omnigold™ Metalization System
MAXIMUM RATINGS
IC  ASI data | | |
| 4 | C2905 | NPN Transistor, 2SC2905 Mitsubishi Electronics data | | |
| 5 | C2909 | NPN Transistor, 2SC2909 www.DataSheet.co.kr
Ordering number:ENN778F
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1207/2SC2909
High-Voltage Switching AF 60W Predriver Applications
Features
· Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob. · Fast switching speed.
Pac  Sanyo Semicon Device data | | |
| 6 | C2910 | NPN Transistor, 2SC2910 Ordering number:ENN781G
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1208/2SC2910
High-Voltage Switching Audio 80W Output Predriver Applications
Features
· Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob. · Fast swtching speed.
Package Dimensi Sanyo Semicon Device data | | |
| 7 | C2911 | NPN Transistor, 2SC2911 Ordering number:ENN779D
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1209/2SC2911
160V/140mA High-Voltage Switching and AF 100W Predriver Applications
Features
· Adoption of FBET process. · High breakdown voltage. · Good linearity of hFE and small Cob. · Fast switching speed.
Package Dimen Sanyo Semicon Device data | |
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