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Datasheet CGY2105ATS Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | CGY2105ATS | High dynamic range dual LNA MMIC INTEGRATED CIRCUITS
DATA SHEET
CGY2105ATS High dynamic range dual LNA MMIC
Preliminary specification File under Integrated Circuits, IC17 1999 Dec 23
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
FEATURES • Dual Low Noise Amplifier (LNA) Monolithic Microw | NXP Semiconductors | data |
CGY Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | CGY0819 | GaAs MMIC (Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones Dual band operation) CGY 0819
GaAs MMIC
l l l l l l
Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones Dual band operation 31.5 dBm saturated output power @ PAE=55% typ. 29 dBm linear output power@ PAE=40% typ. Two independent amplifier chains Power ramp control Input matched to 50 ohms, simple out Siemens Semiconductor Group amplifier | | |
2 | CGY0918 | GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package) CGY 0918
GaAs MMIC
l l l l
Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package Power ramp control
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering code (taped)
Package
CGY 0918
CGY 0918
Q Siemens Semiconductor Group amplifier | | |
3 | CGY1032 | 1 GHz - 32 dB gain GaAs push-pull amplifier CGY1032
1 GHz, 32 dB gain GaAs push-pull amplifier
Rev. 1 — 10 February 2011 Product data sheet
1. Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Heterojunction Field Effect Transistor (HFE NXP Semiconductors amplifier | | |
4 | CGY1041 | 1 GHz - 21 dB gain GaAs push-pull amplifier CGY1041
1 GHz, 21 dB gain GaAs push-pull amplifier
Rev. 1 — 10 February 2011 Product data sheet
1. Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Heterojunction Field Effect Transistor (HFE NXP Semiconductors amplifier | | |
5 | CGY1043 | 1 GHz - 23 dB gain GaAs push-pull amplifier CGY1043
1 GHz, 23 dB gain GaAs push-pull amplifier
Rev. 1 — 10 February 2011 Product data sheet
1. Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Heterojunction Field Effect Transistor (HFE NXP Semiconductors amplifier | | |
6 | CGY1047 | 27 dB gain GaAs push-pull amplifier CGY1047
1 GHz, 27 dB gain GaAs push-pull amplifier
Rev. 01 — 30 July 2009
Product data sheet
1. Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Heterojunction Field NXP Semiconductors amplifier | | |
7 | CGY11A | Diode, Rectifier American Microsemiconductor diode | |
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Número de pieza | Descripción | Fabricantes | |
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