Datasheet CS13N50A8D Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CS13N50A8D	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS13N50 A8D ○R General Description： CS13N50 A8D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can	Huajing Microelectronics

CS13N50 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CS13N50A8H	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS13N50 A8H ○R General Description： VDSS 500 V CS13N50 A8H, the silicon N-channel Enhanced ID 13 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 150 W RDS(ON)Typ 0.34 Ω which reduce the conduction los	Huajing Microelectronics
CS13N50FA9H	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS13N50F A9H ○R General Description： CS13N50F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 500 13 60 0.34 switchi	Huajing Microelectronics
CS13N50FA9R	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS13N50F A9R ○R General Description： CS13N50F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy	Huajing Microelectronics

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