Datasheet CS1N60F Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CS1N60F	VDMOS 1. CS1N60(F) N CS1N60(F) VDMOS 600V VDMOS CS1N60(F) CS1N60 CS1N60F TO-220 TO-220F 2. 2.1 TC=25 () () 2.2 2.2.1 TC=25 VDSS ID IDM VGS EAS R JC R JA PD TJ TSTG VDSS 600V RDS(ON)MAX 10.5Ω ID 1.0A CS4N60 CS4N60F 600 1.0 4.0 30 36 2.3 5.5 62.5 62.5 54 23 15	Huajing Microelectronics

CS1N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CS1N60	VDMOS »ª¾§·ÖÁ¢Æ÷¼þ CS1N60(F) CS1N60(F)ÐÍ 1.¸ÅÊöÓëÌØµã CS1N60(F)ÊÇ ¹ØµçÂ· ¾ßÓÐÈçÏÂÌØµã ¿ª¹ØËÙ¶Èì Í¨Ì¬µç×èÐ¡ ¿É²¢ÁªÊ¹ÓÃ Çý¶¯¼òµ¥ ·â×°ÐÎÊ½ ²úÆ·Ãû³ CS1N60 CS1N60F ·â×°	EDN
CS1N80A1H	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS1N80 A1H ○R General Description： CS1N80 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 800 1 3 12 perfo	Huajing Microelectronics
CS1N65A3	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS1N65 A3 ○R General Description： CS1N65 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 650 0.8 20 13.8 pe	Huajing Microelectronics

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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