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Datasheet CS1N65A1 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 CS1N65A1   Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS1N65 A1 ○R General Description: VDSS 650 V CS1N65 A1, the silicon N-channel Enhanced ID 0.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 3 W which reduce the conduction loss, improve switching RDS(ON)Typ 13.8 Ω perform
Huajing Microelectronics
Huajing Microelectronics
datasheet CS1N65A1 pdf

CS1N6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CS1N60

VDMOS

»ª¾§·ÖÁ¢Æ÷¼þ CS1N60(F) CS1N60(F)ÐÍ 1.¸ÅÊöÓëÌصã CS1N60(F)ÊÇ ¹Øµç· ¾ßÓÐÈçÏÂÌص㠿ª¹ØËÙ¶Èì ̬ͨµç×èС ¿É²¢ÁªÊ¹Óà Çý¶¯¼òµ¥ ·â×°ÐÎʽ ²úÆ·Ãû³ CS1N60 CS1N60F ·â×°
EDN
EDN
datasheet pdf - EDN
CS1N65A3

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS1N65 A3 ○R General Description: CS1N65 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 650 0.8 20 13.8 pe
Huajing Microelectronics
Huajing Microelectronics
datasheet pdf - Huajing Microelectronics
CS1N60A1H

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS1N60 A1H ○R General Description: CS1N60 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 0.8 3 11 per
Huajing Microelectronics
Huajing Microelectronics
datasheet pdf - Huajing Microelectronics


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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