Datasheet CS1N80A1H Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CS1N80A1H	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS1N80 A1H ○R General Description： CS1N80 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 800 1 3 12 performance and enhance t	Huajing Microelectronics

CS1N80 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CS1N80A1H	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS1N80 A1H ○R General Description： CS1N80 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 800 1 3 12 perfo	Huajing Microelectronics
CS1N80A3H	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS1N80 A3H ○R General Description： CS1N80 A3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 800 1 30 12 perf	Huajing Microelectronics
CS1N80A4H	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS1N80 A4H ○R General Description： CS1N80 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ performance and e	Huajing Microelectronics

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Número de pieza	Descripción	Fabricantes	PDF
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