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Datasheet CS25N06B4 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 CS25N06B4   Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS25N06 B4 ○R General Description： CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used
 Huajing Microelectronics
Huajing Microelectronics		 datasheet CS25N06B4 pdf

CS25N0 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CS25N06B3

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS25N06 B3 ○R General Description： CS25N06 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 60 25 50 28 perfo
 Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics
CS25N06B4

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS25N06 B4 ○R General Description： CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The tr
 Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics
CS25N06B8

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS25N06 B8 ○R General Description： CS25N06 B8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 60 25 50 28 perfo
 Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics


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Número de pieza Descripción Fabricantes PDF
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