Datasheet CS2N60A3H Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CS2N60A3H	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS2N60 A3H ○R General Description： VDSS 600 V CS2N60 A3H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.6 Ω performa	Huajing Microelectronics

CS2N60 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CS2N60F	Silicon N-Channel Power MOSFET Huajing Discrete Devices Silicon General Description： CS2N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be	HUAJING
CS2N60	VDMOS Transistor 华晶分立器件 CS2N60(F) CS2N60(F)型 VDMOS 晶体管 1.概述与特点 CS2N60(F)是 N 沟道 600V 系列 VDMOS 晶体管，主要用于电源适配器、充电器等各种功率开关电路。具有如下特点： ● 开关速度快 ● 通态电阻小 ● 可并联使	ETC
CS2N60	N-CHANNEL MOSFET BR2N60(CS2N60) N-CHANNEL MOSFET/N 沟道 MOS 晶体管用途: 用于高功率 DC/DC 转换和功率开关。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. 特点: 低栅电荷,低反馈电容,开关速度	LZG

Esta página es del resultado de búsqueda del CS2N60A3H. Si pulsa el resultado de búsqueda de CS2N60A3H se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

Enlace url :

[1]

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap