Datasheet CS2N70A3R1-G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CS2N70A3R1-G	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS2N70 A3R1-G ○R General Description： VDSS 700 V CS2N70 A3R1-G, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 4.7 Ω pe	Huajing Microelectronics

CS2N70A3R Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CS2N70A3R1-G	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS2N70 A3R1-G ○R General Description： VDSS 700 V CS2N70 A3R1-G, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS	Huajing Microelectronics
CS2N70A3R	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS2N70 A3R ○R General Description： VDSS 700 V CS2N70 A3R, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Ty	Huajing Microelectronics

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Número de pieza	Descripción	Fabricantes	PDF
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