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Datasheet CS3N50B4 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
2 CS3N50B4   Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS3N50 B4 ○R General Description: VDSS 500 V CS3N50 B4, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON) 2.5 Ω performan
Huajing Microelectronics
Huajing Microelectronics
datasheet CS3N50B4 pdf
1 CS3N50B4HY   Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS3N50 B4HY ○R General Description: VDSS 500 V CS3N50 B4HY, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 2.4 Ω per
Huajing Microelectronics
Huajing Microelectronics
datasheet CS3N50B4HY pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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