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Datasheet CS3N90A4H Equivalent ( PDF )

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1 CS3N90A4H   Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS3N90 A4H ○R General Description： CS3N90 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used
 Huajing Microelectronics
Huajing Microelectronics		 datasheet CS3N90A4H pdf

CS3N90 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CS3N90FA9H

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS3N90F A9H ○R General Description： CS3N90F A9H, the silicon N-channel Enhanced VDMOSFET, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and VDSS ID PD(TC=25℃) RDS(ON)Typ 9
 Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics
CS3N90A8

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS3N90 A8 ○R General Description： CS3N90 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)T
 Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics
CS3N90A4H

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS3N90 A4H ○R General Description： CS3N90 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The tr
 Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics


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SPS122

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 Sanken
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