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Datasheet CS4N60 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
14 | CS4N60 | VDMOS
华晶分立器件
CS4N60(F)
CS4N60(F)型 VDMOS 晶体管
1.概述与特点
CS4N60(F)是 N 沟道 600V 系列 VDMOS 晶体管,主要用于电源适配器、充电器等各种功率开 关电路。 具有如下特点: ● 开关速度快 ● 通态电阻小 ● 可并联使 |
EDN |
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13 | CS4N60A3HD | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS4N60 A3HD
○R
General Description:
CS4N60 A3HD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can |
Huajing Microelectronics |
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12 | CS4N60A3R | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS4N60 A3R
○R
General Description:
CS4N60 A3R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be |
Huajing Microelectronics |
|
11 | CS4N60A3TDY | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS4N60 A3TDY
○R
General Description:
CS4N60 A3TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be |
Huajing Microelectronics |
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Número de pieza | Descripción | Fabricantes | |
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