Datasheet CS4N60A4R Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CS4N60A4R	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS4N60 A4R ○R General Description： CS4N60 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be	Huajing Microelectronics

CS4N60 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CS4N60F	N-CHANNEL MOSFET BRF4N60(CS4N60F) 用途: 用于高功率 DC/DC 转换和功率开关。 N-CHANNEL MOSFET/N 沟道 MOS 晶体管 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. 特点: 低栅电荷,低�	ETC
CS4N60	VDMOS 华晶分立器件 CS4N60(F) CS4N60(F)型 VDMOS 晶体管 1.概述与特点 CS4N60(F)是 N 沟道 600V 系列 VDMOS 晶体管，主要用于电源适配器、充电器等各种功率开关电路。具有如下特点： ● 开关速度快 ● 通态电阻	EDN
CS4N60A4HD	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS4N60 A4HD ○R General Description： CS4N60 A4HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 4 75 1.8 pe	Huajing Microelectronics

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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