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Datasheet CS4N60A4TDY Equivalent ( PDF )

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1 CS4N60A4TDY   Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS4N60 A4TDY ○R General Description： CS4N60 A4TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be
Huajing Microelectronics
Huajing Microelectronics		 datasheet CS4N60A4TDY pdf

CS4N60A4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CS4N60A4HD

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS4N60 A4HD ○R General Description： CS4N60 A4HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 4 75 1.8 pe
 Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics
CS4N60A4R

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS4N60 A4R ○R General Description： CS4N60 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Th
 Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics
CS4N60A4TDY

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS4N60 A4TDY ○R General Description： CS4N60 A4TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Th
 Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics


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