Datasheet CS4N65A4R Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CS4N65A4R	Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS4N65 A4R ○R General Description： CS4N65 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be	Huajing Microelectronics

CS4N65 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CS4N65FA9HD	Silicon N-Channel Power MOSFET Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS4N65FA9HD General Description： CS4N65FA9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhan	HUAJING
CS4N65A3HD	Silicon N-Channel Power MOSFET Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS4N65A3HD General Description： CS4N65A3HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance	HUAJING
CS4N65A4D	Silicon N-Channel Power MOSFET Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS4N65 A4D General Description： CS4N65 A4D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance	HUAJING

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