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Datasheet CS5N20A4 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 CS5N20A4   Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS5N20 A4 ○R General Description： VDSS 200 V CS5N20 A4, the silicon N-channel Enhanced ID 4.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 40 W which reduce the conduction loss, improve switching RDS(ON)Typ 0.49 Ω per
 Huajing Microelectronics
Huajing Microelectronics		 datasheet CS5N20A4 pdf

CS5N2 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CS5N20A4

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS5N20 A4 ○R General Description： VDSS 200 V CS5N20 A4, the silicon N-channel Enhanced ID 4.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 40 W which reduce the conduction loss, improve switching RDS(O
 Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics
CS5N20A3

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS5N20 A3 ○R General Description： CS5N20 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The
Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics
CS5N20FA9

Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS5N20F A9 ○R General Description： VDSS 200 V CS5N20F A9, the silicon N-channel Enhanced ID 4.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 20 W which reduce the conduction loss, improve switching RDS(ON
 Huajing Microelectronics
Huajing Microelectronics		 datasheet pdf - Huajing Microelectronics


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Número de pieza Descripción Fabricantes PDF
SPS122

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